Analysis and coding schemes for the flash normal-laplace mixture channel

Error-correcting codes are a critical need for modern flash memories. Such codes are typically designed under the assumption that the voltage threshold distributions in flash cells are Gaussian. This assumption, however, is not realistic. This is particularly the case late in the lifetime of flash devices. A recent work by Parnell et al. provides a parameterized model of MLC (2-bit cell) flash which accurately represents the voltage threshold distributions for an operating period up to 10 times longer than the device´s specified lifetime. We analyze this model from an information-theoretic perspective and compute capacity for the resulting channel. We extrapolate the channel from an MLC to a TLC (3-bit cell) model and we characterize the resulting errors. We show that errors under the improved model are highly asymmetric. We introduce a code construction explicitly designed to exploit the asymmetric nature of these errors, and measure its improvement against existing codes at large P/E cycle counts.