Title :
Analysis of the internal quantum efficiency of β-FeSi2 light-emitting diode
Author :
Jung-Sheng Huang;Kuan-Wei Lee;Cheng-Yao Huang;Peng-Fei Zhang;Jia-Le Xia
Author_Institution :
Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC
fDate :
6/1/2015 12:00:00 AM
Abstract :
This work is to calculate the dc characteristics and investigate the internal quantum efficiencies of β-FeSi2-based DH LED and AlGaAs/GaAs DH LED by analytical methods. The internal quantum efficiencies are decreased as the applied forward-bias voltages are increased. When the intrinsic layer thicknesses and doping concentrations are increased, the internal quantum efficiencies will also increase. At high forward-bias voltages, the internal efficiencies of AlGaAs/GaAs DH LED are superior than that of β-FeSi2 DH LED.
Keywords :
"Conferences","Electron devices","Solid state circuits","Decision support systems"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285043
