Title :
Radiation tolerant DC characteristics of InAs/GaAs quantum-dot diodes
Author :
Yifei Mu;Sang Lam;Cezhou Zhao;N. Babazadeh;Richard A. Hogg;K. Nishi;K. Takemasa;M Sugawara
Author_Institution :
Department of Electrical and Electronic Engineering, Xi´an Jiaotong-Liverpool University (XJTLU), Suzhou, Jiangsu Province 215123, China
fDate :
6/1/2015 12:00:00 AM
Abstract :
Effects of 137Cs gamma irradiation on the DC electrical characteristics of InAs/GaAs quantum dots (QDs) mesa diodes are reported. The devices were irradiated with gamma-rays for different doses ranging from 100 rad to about 1 Mrad (GaAs). The QDs mesa diodes are found to be tolerant to γ radiation. No enhanced leakage current and shift in the turn-on voltage were observed in the InAs/GaAs QD devices after exposure to γ-radiation. When irradiated by γ-rays continuously, there seemed to be a small degradation trend in the forward-bias current after irradiating the mesa diode for about six hours.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285062
