• DocumentCode
    3664675
  • Title

    Material and device performance of TiO2 doped GeTe for ruggedized memory applications

  • Author

    E. K. Chua;M. H. Li;K. G. Lim;C. C. Yeap;L. T. Law;W. J. Wang;E. G. Yeo;F. Ernult

  • Author_Institution
    Data Storage Institute, (A∗
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    162
  • Lastpage
    165
  • Abstract
    GeTe phase change material doped with 12 to 22 atomic percent TiO2 were deposited and characterized. The crystallization of amorphous doped GeTe is inhibited by the incorporation of TiO2 dopant up to 22 % as depicted by the increasing activation energy. However, only working devices fabricated using 12% of TiO2 dopant with activation energy of 4.24 eV and crystallization temperature of 210 °C was compared with GeTe. Doped GeTe devices achieved power reduction of 79 % as compared to GeTe devices, operated at 150 °C and achieved endurance of 5×104 cycles.
  • Keywords
    "Temperature measurement","Thermal stability","Resistance","Crystallization","Doping","Electrical resistance measurement","Voltage measurement"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285075
  • Filename
    7285075
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664675