Material and device performance of TiO2 doped GeTe for ruggedized memory applications

GeTe phase change material doped with 12 to 22 atomic percent TiO₂ were deposited and characterized. The crystallization of amorphous doped GeTe is inhibited by the incorporation of TiO₂ dopant up to 22 % as depicted by the increasing activation energy. However, only working devices fabricated using 12% of TiO₂ dopant with activation energy of 4.24 eV and crystallization temperature of 210 °C was compared with GeTe. Doped GeTe devices achieved power reduction of 79 % as compared to GeTe devices, operated at 150 °C and achieved endurance of 5×10⁴ cycles.