DocumentCode :
3664677
Title :
A 28.4 pj per conversion ISFET-based pH sensing design for low-energy applications
Author :
Jian Sen Teh;Anh-Tuan Do;Tony Tae-Hyoung Kim;Liter Siek
Author_Institution :
Centre of Excellence in IC Design (VIRTUS), Nanyang Technological University, Singapore 639798
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
174
Lastpage :
177
Abstract :
Ion-Sensitive Field-Effect Transistor (ISFET) is an emerging technology that has the potential to be used for pH sensing and other ion-based sensing applications. In conventional ISFET designs, pH sensors convert H+ concentration into analog voltage before digitizing to binary bits. This paper proposes a digital-based ISFET design that minimizes the use of analog front end and directly converts pH into 10-bit binary output using digital comparators and a counter. Our simulation results in standard 65nm CMOS technology proved that the design has a resolution of 0.0437 pH with energy performance of 28.4 pj/conversion.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
Type :
conf
DOI :
10.1109/EDSSC.2015.7285078
Filename :
7285078
Link To Document :
بازگشت