• DocumentCode
    3664677
  • Title

    A 28.4 pj per conversion ISFET-based pH sensing design for low-energy applications

  • Author

    Jian Sen Teh;Anh-Tuan Do;Tony Tae-Hyoung Kim;Liter Siek

  • Author_Institution
    Centre of Excellence in IC Design (VIRTUS), Nanyang Technological University, Singapore 639798
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    174
  • Lastpage
    177
  • Abstract
    Ion-Sensitive Field-Effect Transistor (ISFET) is an emerging technology that has the potential to be used for pH sensing and other ion-based sensing applications. In conventional ISFET designs, pH sensors convert H+ concentration into analog voltage before digitizing to binary bits. This paper proposes a digital-based ISFET design that minimizes the use of analog front end and directly converts pH into 10-bit binary output using digital comparators and a counter. Our simulation results in standard 65nm CMOS technology proved that the design has a resolution of 0.0437 pH with energy performance of 28.4 pj/conversion.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285078
  • Filename
    7285078