DocumentCode
3664677
Title
A 28.4 pj per conversion ISFET-based pH sensing design for low-energy applications
Author
Jian Sen Teh;Anh-Tuan Do;Tony Tae-Hyoung Kim;Liter Siek
Author_Institution
Centre of Excellence in IC Design (VIRTUS), Nanyang Technological University, Singapore 639798
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
174
Lastpage
177
Abstract
Ion-Sensitive Field-Effect Transistor (ISFET) is an emerging technology that has the potential to be used for pH sensing and other ion-based sensing applications. In conventional ISFET designs, pH sensors convert H+ concentration into analog voltage before digitizing to binary bits. This paper proposes a digital-based ISFET design that minimizes the use of analog front end and directly converts pH into 10-bit binary output using digital comparators and a counter. Our simulation results in standard 65nm CMOS technology proved that the design has a resolution of 0.0437 pH with energy performance of 28.4 pj/conversion.
Keywords
"Conferences","Electron devices","Solid state circuits"
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN
978-1-4799-8362-9
Type
conf
DOI
10.1109/EDSSC.2015.7285078
Filename
7285078
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