Title :
Strain modulated variations in monolayer phosphorene n-MOSFET
Author :
Arnab Mukhopadhyay;Lopamudra Banerjee;Amretashis Sengupta;Hafizur Rahaman
Author_Institution :
School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur Howrah-711103, India
fDate :
6/1/2015 12:00:00 AM
Abstract :
We investigate the effect of tensile and compressive strain in Phosphorene FET. Different percentage of tensile and compressive strain are applied on monolayer Phosphorene along the zigzag edge and the corresponding effects on bandgap, electron effective mass and ON current are analyzed. The optimum strain region is observed at 4% tensile strain for Phosphorene for the application in FET device. About 8.5 times improvement in ON current was observed for this strain percentage.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285100
