Asymmetrie Vacuum Gate Dielectric Schottky Barrier Gate all around MOSFET for ambipolarity reduction and improved hot carrier reliability

This paper proposes a novel Asymmetric Vacuum (Asy-Vacu) Gate Dielectric (GD) Schottky Barrier (SB) Gate All Around (GAA) MOSFET structure for eliminating ambipolarity and improved hot carrier reliability. Analog/RF performance of proposed device is compared with conventional SiO₂ dielectric SB GAA MOSFET and Vacuum gate dielectric SB GAA MOSFET and it is found that Asy-Vacu SB-GAA MOSFET outperform the other two structures and is applicable for high speed applications. Proposed structure not only suppresses ambipolarity it also reduces the electron temperature and electric field at drain end. It also increases I_on/I_off ratio while maintaining good subthreshold slope making it potential candidate for digital applications.