Title :
Modeling and analysis of VIA effect to LD-MOSFET RF amplifier performance
Author_Institution :
Electronics Research Group, School of Electrical Engineering and Informatics, Institute of Technology Bandung, Labtek VIII Building 3 Fl Jl Ganeshano 10, Bandung 40132, Indonesia
fDate :
6/1/2015 12:00:00 AM
Abstract :
Modeling of VIA as additional extrinsic elements to LD MOSFET model utilized as a pre-amplifier of a 45dBm LTE front-end has been simulated and characterized in 1.8GHz LTE band. The RF gain performance degradation of the LD-MOSFET pre-amplifier has been verified through the simulation using modified array of shunt inductance network and verified experimentally by S-parameter measurement on some VIA structures with various dimension and PCB manufacturing arrangement. The Via effect to RF S-parameter and gain performance of the 1.8GHz pre-amplifier and over-all front-end has been fitted and analyzed. RF PCB manufacturing process aiming VIA manufacturing quality has been endorsed as a result of RF gain performance verification.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285142
