A surface potential based quasi-ballistic double gate MOSFET model

A double gate MOSFET model is developed with surface potential based charge model and quasi-ballistic transport based velocity model with only one extracted parameter. Compared to the traditional drift-diffusion model, the quasi-ballistic transport velocity model can describe the I-V characteristics better for sub-30nm MOSFET. Besides, a completely surface potential based charge model with both dope and inversion charge is more accurate at smaller feature size. This model is verified by numerical simulations at the end of this paper.