• DocumentCode
    3664753
  • Title

    1GHz wireless power delivery using 0.2×0.2mm2 on-chip inductor for 3-D stacked chips

  • Author

    Liusheng Sun;Junwei Xu;Weijun Mao;Shuai Zou;Peijin Lv;Xiaolei Zhu

  • Author_Institution
    Institute of VLSI Design, Zhejiang University, Hangzhou, 310027, China
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    475
  • Lastpage
    478
  • Abstract
    A high frequency, high power density wireless interchip power delivery for 3-D Stacked chips applications is proposed and implemented in SMIC 65-nm CMOS process. To achieve high operating frequency-1 GHz, a frequency multiplication circuit is proposed. A capacitive compensation in transmitter side is used to improve the power delivery performance in Series-Paralled topology based on the principle of magnetic resonance coupling. 12 mW power delivery is achieved by using 0.2 × 0.2 mm2 inductor with a 30 μm separation between stacked chips. The size of inductor is 91% reduction compared with previous reported chip-to-chip wireless power transmission systems.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285154
  • Filename
    7285154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664753