ASM-HEMT: Compact model for GaN HEMTs

In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects, access region resistance effects, DIBL, temperature dependance and models for gate current and noise. The model has been rigorously tested on measured data, and shows good match.