Title :
ASM-HEMT: Compact model for GaN HEMTs
Author :
Avirup Dasgupta;Sudip Ghosh;Yogesh Singh Chauhan;Sourabh Khandelwal
Author_Institution :
Dept. of Electrical Engineering, Indian Institute of Technology Kanpur, India
fDate :
6/1/2015 12:00:00 AM
Abstract :
In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects, access region resistance effects, DIBL, temperature dependance and models for gate current and noise. The model has been rigorously tested on measured data, and shows good match.
Keywords :
"Computational modeling","HEMTs","MODFETs","Logic gates","Integrated circuit modeling","Noise","Gallium nitride"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285159
