Extraction of interface trap densities in high-mobility semiconductor MOSFETs

The existing techniques used for extracting the density of interface states in Si-SiO₂ devices are not directly valid in high-mobility semiconductor-high-K dielectric structures because many of the underlying assumptions do not remain true. The limitations of the existing methods are discussed. A recently proposed technique, based on the low-frequency C-V method, which overcomes many of these limitations, is reviewed.