The study on width quantization impact on device performance and reliability for high-k/metal tri-gate FinFET

In this work, the impact of width quantization on device characteristic and voltage stressing induced device degradation for high-k/metal tri-gate n-type FinFET was investigated well including electrical measurement and simulation. Carrier conduction in the Si-fin body of FinFETs was different for device with different Fin width (W_Fin) and it will impact the device characteristic and voltage stressing induced device degradation. The experimental results show that the threshold voltage/subthreshold-swing and driving capability were decreases as W_Fin is reduced. Owing to more uniform distribution of space charge along in Fin channel, a thinner W_Fin FinFET exhibits greater immunity to short channel effects.