DocumentCode :
3664804
Title :
Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process
Author :
Kai-Di-Mai; Hou-Yu-Wang;Li-Yi Peng;Yuan-Hsiang Cheng;Hsien-Chin Chiu;H. L. Kao
Author_Institution :
Department of Electronics Engineering, Chang Gung University Taoyuan, Taiwan, R.O.C
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
676
Lastpage :
678
Abstract :
In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×1019 cm3. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The Vth, maximum Ids, and gm peak were +0.8V, 242.3 mA/mm, and 45.3 mS/mm, respectively. Low frequency noise, C-V measurement, and pulse measurement were analyzed to comprehend this device.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
Type :
conf
DOI :
10.1109/EDSSC.2015.7285206
Filename :
7285206
Link To Document :
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