Title :
Impact of post-deposition annealing on the resistive switching characteristics and forming voltage step of Al/HfO2/W structures
Author :
J. Molina-Reyes;R. Valderrama-B
Author_Institution :
Electronics Department, National Institute of Astrophysics, Optics and Electronics (INAOE), Tonantzintla, Puebla, Mé
fDate :
6/1/2015 12:00:00 AM
Abstract :
MIM structures based in hafnium oxide with different annealing process were fabricated. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. We probe that one of our structures can be integrated into the BEOL stage of a CI.
Keywords :
"Annealing","Electrodes","Hafnium compounds","Performance evaluation","Optical switches","Temperature"
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
DOI :
10.1109/EDSSC.2015.7285213
