Author_Institution :
Shanghai Wenxiang Automotive Sensors Co. Ltd., Shanghai Baolong Automotive Corp., Shanghai, China
Abstract :
Silicon piezoresistive pressure sensor uses semiconductor silicon as the force sensitive thin film, and it is produced by using the integrated technology to the lithography resistance, ion implantation, diffusion, etching and bonding on the surface offeree sensitive thin film, etc. So there are such characteristics as the high sensitivity, quick response, wide range of temperature, wide measuring range, small size, low in cost in it, etc. This kind of pressure sensor is widely used by far. However, because of adopting the semi-conductor integrated technology, the discreteness which is generated during ion implantation and diffusion makes the coefficient of the temperature of each bridge arm different. It mainly includes the thermo zero drift and the thermo sensitivity drift. Thus it makes the advantage of the silicon piezoresistive pressure sensor covered, and also bring the big difficulties to the manufacturing. So the drift compensation becomes the technical difficulty on the study and the manufacturing of the silicon piezoresistive sensor. This paper summarizes the intelligent compensation calibration algorithm for 3D polyhedron combining the practical applications of our own company. Use the pressure, temperature and the output data which is tested to build the 3D polyhedron model. To calculate the output characteristics of the compensation coefficient analog silicon piezoresistive pressure sensor and make the test output values be approximate to the target values by the method of conducting the multi-dimensional equation from the 3D polyhedron model.