Study on sensing properties of ISFETs fabricated with APTES/S1O2 stacked sensing membrane

This study addresses on the characteristic of electrolyte-insulator silicon (EIS) and ion selective field effect transistors (ISFETs) with self-assembled monolayer (SAM)/SiO₂ stacked sensing membrane. The proposed stacked sensing membrane exhibited higher sensitivity, lower hysteresis, and lower drift characteristics than that with oxide sensing membrane. The surface group of self-assembled monolayer (3-aminopropyltriethoxysilane - APTES) can improve the surface potential response to the ion concentration. With this approach, the high performance ISFETs can be fabricated for future biosensor applications.