DocumentCode :
3664842
Title :
0.18μm BCD technology platform with performance and cost optimized fully isolated LDMOS
Author :
Ming Li;Jeoung-Mo Koo;Raj Verma Purakh
Author_Institution :
Technology Development department, GLOBALFOUNDRIES, 60 Woodlands Industrial Park D, Street 2, Singapore
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
820
Lastpage :
822
Abstract :
We have developed a cost-optimized 0.18μm BCD technology platform, which provides fully isolated LDMOS devices with competitive specific on-resistance (Rsp) over a range of operating voltages (6V to 30V). In addition, latch-up-free ESD solutions are provided without additional process cost.
Keywords :
"Conferences","Electron devices","Solid state circuits"
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
Print_ISBN :
978-1-4799-8362-9
Type :
conf
DOI :
10.1109/EDSSC.2015.7285244
Filename :
7285244
Link To Document :
بازگشت