DocumentCode :
3665932
Title :
Higher I2t stress on equipment due to increased penetration of Distributed Generation
Author :
L. Nie;W. Fu;M. Vaziri;M. Zarghami
Author_Institution :
California State University, Sacramento (CSUS), 95819 USA
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
5
Abstract :
Increased penetration of Distributed Generation (DG) raises the total I2t levels on the power distribution network. Increased level of I2t is directly related to the stress levels impressed on the equipment during short circuit faults. In this paper, the definition and significance of I2t as it relates to increased stress level of equipment are explained. It is reconfirmed through simulations that increased penetration of DG leads to higher levels of total I2t at every fault location. It is shown that I2t supplied by the DG rises with higher penetration levels, confirming previous findings. The results also indicate that I2t supplied by the substation decreases which contradicts previous research. Four types of short circuit faults, including 3Phase, Line to Line(L-L), Line to Line to Ground(L-L-G) and Single Line to Ground(1L-G) faults are simulated on the IEEE 34-node test feeder, modified with 24 buses using two different programs known as Electrical Transient and Analysis Program (ETAP®) and Advanced Systems for Power Engineering (ASPEN®). Simulation data from both programs indicating higher confidence in accuracy due to close agreement between the results has been presented.
Keywords :
"Lead","System-on-chip"
Publisher :
ieee
Conference_Titel :
Power & Energy Society General Meeting, 2015 IEEE
ISSN :
1932-5517
Type :
conf
DOI :
10.1109/PESGM.2015.7286406
Filename :
7286406
Link To Document :
بازگشت