• DocumentCode
    3666519
  • Title

    Study on the clamp diodes of grid-emitter influencing the active voltage balancing of series connected IGBTs

  • Author

    XuZhe Xu;YaoHong Sun

  • Author_Institution
    Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    660
  • Lastpage
    663
  • Abstract
    This paper presents the clamp diodes in gate driving circuit significantly influenced the transient balancing of series-connected IGBTs. By the method of Monte Carlo and vary simulation analysis, slight differences of a plurality of IGBTs in the transient voltage balancing can be accumulated in a particular IGBT. More IGBTs, this case was more serious. The differences of voltage-clamp generally accounted for five percent, but the voltage differences emerged by 48 IGBTs in series were more than four times. Through the in-depth analysis, the diode clamp voltage difference would cause the gate turn-off delay differences. This is one of the key factors occurred the dynamic voltage imbalance.
  • Keywords
    "Insulated gate bipolar transistors","Monte Carlo methods","Transient analysis","Discharges (electric)","Logic gates","Resistors","Clamps"
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator and High Voltage Conference (IPMHVC), 2014 IEEE International
  • Print_ISBN
    978-1-4673-7323-4
  • Type

    conf

  • DOI
    10.1109/IPMHVC.2014.7287363
  • Filename
    7287363