• DocumentCode
    3667155
  • Title

    Hot-electron noise and energy relaxation in wurtzite ZnO

  • Author

    Emilis Šermukšnis;Juozapas Liberis;Arvydas Matulionis;Mykyta Toporkov;Vitaliy Avrutin;Ümit Özgür;Hadis Morkoç

  • Author_Institution
    Center for Physical Sciences and Technology, Fluctuation Research Laboratory, Vilnius, Lithuania LT-02300
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Hot-electron noise measurements at a 38.5 GHz frequency were used for extraction of hot-electron energy relaxation time in a ZnO/Mg0.38Zn0.62O/ZnO channel with a two-dimensional electron gas (2DEG). The relaxation time of ~55 fs was obtained at a 2DEG density of ~ 5.5 × 1012 cm-2. The ultrafast relaxation took place in the vicinity of LO-phonon- plasmon resonance. The results suggest that the power dissipation is enhanced by plasmons. The results are in good agreement with those reported for GaN and InGaAs 2DEG channels and doped ZnO films.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","MODFETs","HEMTs","Noise","Phonons","Gallium nitride"
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICNF.2015.7288567
  • Filename
    7288567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667155