Title :
Hot-electron noise and energy relaxation in wurtzite ZnO
Author :
Emilis Šermukšnis;Juozapas Liberis;Arvydas Matulionis;Mykyta Toporkov;Vitaliy Avrutin;Ümit Özgür;Hadis Morkoç
Author_Institution :
Center for Physical Sciences and Technology, Fluctuation Research Laboratory, Vilnius, Lithuania LT-02300
fDate :
6/1/2015 12:00:00 AM
Abstract :
Hot-electron noise measurements at a 38.5 GHz frequency were used for extraction of hot-electron energy relaxation time in a ZnO/Mg0.38Zn0.62O/ZnO channel with a two-dimensional electron gas (2DEG). The relaxation time of ~55 fs was obtained at a 2DEG density of ~ 5.5 × 1012 cm-2. The ultrafast relaxation took place in the vicinity of LO-phonon- plasmon resonance. The results suggest that the power dissipation is enhanced by plasmons. The results are in good agreement with those reported for GaN and InGaAs 2DEG channels and doped ZnO films.
Keywords :
"Zinc oxide","II-VI semiconductor materials","MODFETs","HEMTs","Noise","Phonons","Gallium nitride"
Conference_Titel :
Noise and Fluctuations (ICNF), 2015 International Conference on
DOI :
10.1109/ICNF.2015.7288567
