Title :
1/F noise and superimposed RTS noise in Ti-Au/n-type GaAs Schottky barrier diodes
Author :
A. V. Klyuev;A. V. Yakimov
Author_Institution :
Department of Bionics and Statistical Radiophysics, Lobachevsky State University, Nizhni Novgorod, Russia
fDate :
6/1/2015 12:00:00 AM
Abstract :
Low frequency noise characteristics of Schottky diodes are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It is concluded that the RTS noise and 1/f noise have different physical origins in Schottky diodes.
Keywords :
"Schottky diodes","1f noise","Fluctuations","Gaussian noise","Noise measurement","Gallium arsenide"
Conference_Titel :
Noise and Fluctuations (ICNF), 2015 International Conference on
DOI :
10.1109/ICNF.2015.7288575
