Drastic suppression of the 1/f noise in MOSFETs: Fundamental fluctuations of mobility rather than induced mobility fluctuations

A significant reduction of the 1/f noise level has been achieved by the means of a new Metal-Oxide-Semiconductor (MOS) structure and new fabrication processes, opening new horizons for future Very large Scale Integration (VLSI) technology. Furthermore, on account of these investigations, the study of the 1/f noise has been made possible at high drain current. While we might have thought that the 1/f noise could be explained in term of oxide charge and induced mobility fluctuations, the study within this specific operating range revealed the ineffectiveness of the induced mobility fluctuations to accurately model the noise. Instead, better modeling has been achieved through the use of the fundamental fluctuations of mobility of the Hooge theory testifying in favor of the oxide charge and fundamental fluctuations of mobility to explain the 1/f noise in our MOSFETs.