Low frequency noise spectroscopy in rotated UTBOX nMOSFETs

The low frequency noise measurements as a function of temperature are used as a non-destructive device characterization tool in order to evaluate the quality of the silicon film and to identify traps induced during the device processing in standard <;100> and rotated <;110> UTBOX n-type transistors. By comparing two methods, one to estimate the volume trap density and another to estimate the effective trap density of the identified traps in the Si film, it was found that the correction factor B is lower than the theoretically predicted one for conventional planar single gate transistors.