Title :
Low frequency noise characteristics of bow-tie THz detectors based on InGaAs
Author :
S. Pralgauskaitė;J. Matukas;A. Lisauskas;V. Palenskis;I. Kašalynas;L. Minkevičius;D. Seliuta;G. Valušis
Author_Institution :
Radiophysics Dep., Physics Faculty, Vilnius University, Vilnius, Lithuania
fDate :
6/1/2015 12:00:00 AM
Abstract :
Experimental investigation of low frequency noise characteristics of the In0.53Ga0.47As/InP bow-tie terahertz detectors with a near monolayer of InAs has been carried out in (77-300) K temperature range. Spectral density of voltage fluctuations of investigated diodes at room temperature is proportional to 1/f, while below 200 K Lorentzian-type spectra dominate. Characteristic times of the observed charge carrier capture and release processes are distributed between ten microseconds and millisecond; activation energy of the processes is in the range from 0,04 eV to 0,36 eV.
Keywords :
"Noise","Fluctuations","Detectors","Semiconductor diodes","Charge carriers","Imaging","Indium phosphide"
Conference_Titel :
Noise and Fluctuations (ICNF), 2015 International Conference on
DOI :
10.1109/ICNF.2015.7288593
