Absence of 1/f noise from diffusion and generation-recombination currents in p-i-n type-II superlattice MWIR detector

The paper concerns the correlations between low-frequency noise and dark currents in the p-i-n diode made of type-II InAs/GaSb superlattice material designed for mid-wavelength infrared. It is shown that diffusion and generation-recombination currents do not contribute to low-frequency 1/f noise as opposed to the leakage current which is strongly correlated with 1/f noise. This conclusion was drawn basing on the measurements of noise spectra as a function of temperature in the range 77 K to 240 K.