Effect of extension architecture on the LF noise of UTBOX SOI MOSFETs

The effect of the S/D extensions architecture on the low-frequency noise and DC characteristics of Ultra-Thin Buried Oxide (UTBOX) SOI MOSFETs measured at zero/accumulated back-gate voltage is discussed. The undoped underlapped extensions were found to be responsible for an increased 1/f noise level and resistance of devices with extensionless architecture. The noise spectra of these devices also appears to be immune to the Linear Kink Effect Lorentzians contribution, usually observed in the noise spectra of MOSFETs with doped extensions when accumulated back gate voltage is applied.