• DocumentCode
    3667220
  • Title

    Low-frequency noise of advanced memory devices

  • Author

    E. Simoen;R. Ritzenthaler;T. Schram;N. Horiguchi;M. Jurczak;A. Thean;C. Claeys;M. Aoulaiche;A. Spessot;P. Fazan

  • Author_Institution
    Imec, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper reviews the application of low-frequency noise and Random Telegraph Signal (RTS) studies on advanced memory devices, namely, Metal-Insulator-Metal capacitors with SrTiOx as insulator, peripheral transistors for Dynamic Random Access Memories and Resistive Random Access Memory structures. In the first two cases, flicker noise is used to analyze the quality or defectiveness of the gate stack, while in the third case, both flicker and RTS noise provide information on the carrier trapping and transport.
  • Keywords
    "Logic gates","Electrodes","Random access memory","Low-frequency noise","Tin","1f noise"
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICNF.2015.7288633
  • Filename
    7288633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667220