Highly sensitive hybrid organic-nanocrystal detector

The ability to integrate electronics with Nanocrystals (NCs) allows utilizing their unique properties for a future optoelectronic device. Combing top down approach using self-assembled hybrid organic-NCs systems, with bottom up components can revolutionize devices in future. Here we present an ultra-high light sensing device based on InAs NCs acting as an optical gate to high electron mobility transistor (HEMT) device. Using a very narrow channel the device quantum efficiency is high as 10⁶V/W, while the single to noise ratio (SNR) enables high sensitivity photon detection. These results are compatible with our theoretical estimations.