Title :
Challenges and responses for virtual silicon
Author_Institution :
CAE Team, Semiconductor R&
Abstract :
The dimensional evolution of device has increased the importance of TCAD simulation and its multilateral expansion to process and design domains. Challenges for achieving virtual silicon as a holistic simulation analysis and recent progresses are discussed.
Keywords :
"Silicon","Stress","Integrated circuit modeling","Three-dimensional displays","Surface topography","Performance evaluation","Surface treatment"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292263
