DocumentCode :
3667916
Title :
Coupled 2D/3D transport: Analysis of graphene-SiC devices
Author :
M.G. Ancona;K.D. Hobart;T.J. Anderson
Author_Institution :
Electronics S&
fYear :
2015
Firstpage :
161
Lastpage :
164
Abstract :
Macroscopic equations are discussed that describe carrier transport in situations in which an ordinary 3D semiconductor is coupled to a 2D material like graphene or molybdenum disulfide. The transport equations are familiar ones from either diffusion-drift or density-gradient theory, with the main focus being on the critical boundary conditions that couple the two systems together. To illustrate the hybrid description we apply it to situations involving graphene on p-type SiC.
Keywords :
"Graphene","Silicon carbide","Three-dimensional displays","Electric potential","Mathematical model","Schottky diodes","Boundary conditions"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4673-7858-1
Type :
conf
DOI :
10.1109/SISPAD.2015.7292284
Filename :
7292284
Link To Document :
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