Title :
Coupled 2D/3D transport: Analysis of graphene-SiC devices
Author :
M.G. Ancona;K.D. Hobart;T.J. Anderson
Author_Institution :
Electronics S&
Abstract :
Macroscopic equations are discussed that describe carrier transport in situations in which an ordinary 3D semiconductor is coupled to a 2D material like graphene or molybdenum disulfide. The transport equations are familiar ones from either diffusion-drift or density-gradient theory, with the main focus being on the critical boundary conditions that couple the two systems together. To illustrate the hybrid description we apply it to situations involving graphene on p-type SiC.
Keywords :
"Graphene","Silicon carbide","Three-dimensional displays","Electric potential","Mathematical model","Schottky diodes","Boundary conditions"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292284