Computational study of graphene FETs (GFETs) as room-temperature terahertz emitter

The effect of electron scattering on the plasma-wave instability in the channel of GFETs has been studied through solving the governing hydrodynamic (HD) equations numerically, which are based on the linear energy-momentum dispersion, i.e., Dirac cone, of graphene [1]. It is revealed that there exists a critical scattering strength determined by the carrier mobility and channel length, above which the instability cannot be sustained. While analytical solution can only be obtained under the dissipationless condition, numerical calculation is conducted considering the scattering term. We conclude that the realization of room temperature terahertz emitter is possible in GFETs as long as careful device design and high quality graphene channel are achieved.