Title :
Layout-based TCAD device model generation
Author :
C. Kernstock;Z. Stanojević;O. Baumgartner;M. Karner
Author_Institution :
Global TCAD Solutions GmbH, Landhausgasse 4/1A, 1010 Wien, Austria
Abstract :
In this work, a fully automated process emulation is presented. Starting from industrial standard gdsII mask files a user friendly and fast way to create TCAD ready models has been realized. A three step approach is used. The creation of virtual layers to allow for logical operation based on masks is shown. Then the geometrical and dopant profile instantiation is carried out. Third the mesh generation based on and optimized on the information of the first two steps is shown. Industry-relevant sample applications for the implemented work-flow ranging from a radiation hardened latch to a state of the art FinFET SRAM cell are demonstrated.
Keywords :
"Semiconductor process modeling","Doping","Solid modeling","Computational modeling","Integrated circuit modeling","Layout","Random access memory"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292293
