FinFET to nanowire transition at 5nm design rules

Semi-classical and quantum transport approaches are applied and compared to analyze the relative driving strength of nmos nanowires compared to FinFETs at 5nm design rules. Both transport approaches show better-than-expected nanowire drive current. The reason for this strong performance is explained in terms of electrostatic and subband structure effects. The impact of scattering on the fin to nanowire transition is also examined.