Hierarchical TCAD device simulation of FinFETs

A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool. Using this approach as a reference, the predictiveness of empirical TCAD models is extended by re-calibration. Our hierarchical tool chain is embedded in an industry-proven framework equipped with DOE and optimization modules. The capabilities are demonstrated in a simulation study on a recent FinFET technology node.