Modeling of temperature dependency of magnetization in straintronics memory devices

While a tremendous amount of work has been dedicated to the study of Langevin thermal noise field in spintronics magnetic tunneling junction (MTJ), a comprehensive model that predicts both static and dynamic responses of the magnetization due to temperature variations is yet to exist. In this work, we will first study the dependency of the saturation magnetization on temperature. We will then analyze the variations of the shape anisotropy and energy barrier of the straintronics MTJ on temperature. Lastly, we will incorporate these dependencies, along with the well-studied Langevin thermal field into the LLG equation to simulate the dynamic and static behavior of the straintronics devices.