DocumentCode :
3667945
Title :
Thermal modeling of metal oxides for highly scaled nanoscale RRAM
Author :
Sanchit Deshmukh;Raisul Islam;Clare Chen;Eilam Yalon;Krishna C. Saraswat;Eric Pop
Author_Institution :
Department of Electrical Engineering, Stanford University, CA 94305, U.S.A.
fYear :
2015
Firstpage :
281
Lastpage :
284
Abstract :
Resistive random access memory (RRAM) is a promising candidate for future non-volatile memory applications due to its potential for performance, scalability and compatibility with CMOS processing. The switching in the RRAM cell occurs via formation of conductive filaments composed of sub-stoichiometric oxide (SSO). In this work, we model thermal conduction in a pair of neighboring memory cells, taking into account more detailed phonon scattering effects in the SSO than previously considered. We find that for devices scaled below 10 nm in bit spacing, the neighboring filament temperature can increase significantly even when only the phononic heat conduction is considered. This increase is underestimated if using the previous state-of-the-art model of thermal conductivity of SSO, i.e. linear interpolation between metal and stoichiometric oxide thermal conductivity.
Keywords :
"Scattering","Thermal conductivity","Conductivity","Phonons","Interpolation","Hafnium compounds"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4673-7858-1
Type :
conf
DOI :
10.1109/SISPAD.2015.7292314
Filename :
7292314
Link To Document :
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