DocumentCode
3667988
Title
TCAD simulation methodology for 3-D advanced electro-physical and optical analysis
Author
Patrik Príbytný;Marián Molnár;Aleš Chvála;Juraj Marek;Miroslav Mikolášek;Daniel Donoval
Author_Institution
Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Slovakia
fYear
2015
Firstpage
455
Lastpage
458
Abstract
This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated in the full 3-D setup within a reasonable amount of time. Therefore, derived solutions are proposed, which are based on the combined-mode setup coupling the 3-D TCAD model of the solar cell to a “standard” TCAD (2-D or 3-D) model of the active device. We propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode simulation assuming additional 3-D effects.
Keywords
"Photovoltaic cells","Solid modeling","Mathematical model","Semiconductor device modeling","Silicon","Optical buffering","Buffer layers"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292360
Filename
7292360
Link To Document