• DocumentCode
    3667988
  • Title

    TCAD simulation methodology for 3-D advanced electro-physical and optical analysis

  • Author

    Patrik Príbytný;Marián Molnár;Aleš Chvála;Juraj Marek;Miroslav Mikolášek;Daniel Donoval

  • Author_Institution
    Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Slovakia
  • fYear
    2015
  • Firstpage
    455
  • Lastpage
    458
  • Abstract
    This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated in the full 3-D setup within a reasonable amount of time. Therefore, derived solutions are proposed, which are based on the combined-mode setup coupling the 3-D TCAD model of the solar cell to a “standard” TCAD (2-D or 3-D) model of the active device. We propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode simulation assuming additional 3-D effects.
  • Keywords
    "Photovoltaic cells","Solid modeling","Mathematical model","Semiconductor device modeling","Silicon","Optical buffering","Buffer layers"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292360
  • Filename
    7292360