An enhanced specialized SiC power MOSFET simulation system

This work presents the recent progress in the development of a simulation system, CoolSPICE, specifically targeting high-power and high-temperature simulations of SiC power MOSFET devices in particular. CoolSPICE uses a subcircuit based on the conventional BSIM MOSFET model to represent SiC power MOSFETs. The BSIM equation set is modified and new parameters are added to the model set to account for the performance and behavior differences between conventional CMOS and these high power devices, while the robustness of BSIM is preserved. The parameter set is extracted by matching IV and CV curve measurements to simulations. Accuracy and robustness are verified by using this model to simulate typical power MOSFET circuit architectures.