Title :
Investigation of carrier transport in nitride based LED by considering the random alloy fluctuation
Author :
Chen-Kuo Wu;Chi-Kang Li;Yuh-Renn Wu
Author_Institution :
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan, University, Taipei 10617, Taiwan
Abstract :
The past researches show that the alloy fluctuation dominates the carrier percolation transport and light emission behavior in light emitting diodes (LEDs). To further understand the carrier behavior with alloy fluctuations, we have systematically investigated the carrier transport in the n-i-n InGaN quantum wells (QWs) and how the different electron blocking layer (EBL) affects the current-voltage curve and internal quantum efficiency (IQE).
Keywords :
"Light emitting diodes","Current density","Aluminum gallium nitride","Wide band gap semiconductors","Three-dimensional displays","Gallium nitride"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292794
