• DocumentCode
    3668401
  • Title

    Investigation of carrier transport in nitride based LED by considering the random alloy fluctuation

  • Author

    Chen-Kuo Wu;Chi-Kang Li;Yuh-Renn Wu

  • Author_Institution
    Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan, University, Taipei 10617, Taiwan
  • fYear
    2015
  • Firstpage
    5
  • Lastpage
    6
  • Abstract
    The past researches show that the alloy fluctuation dominates the carrier percolation transport and light emission behavior in light emitting diodes (LEDs). To further understand the carrier behavior with alloy fluctuations, we have systematically investigated the carrier transport in the n-i-n InGaN quantum wells (QWs) and how the different electron blocking layer (EBL) affects the current-voltage curve and internal quantum efficiency (IQE).
  • Keywords
    "Light emitting diodes","Current density","Aluminum gallium nitride","Wide band gap semiconductors","Three-dimensional displays","Gallium nitride"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292794
  • Filename
    7292794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668401