• DocumentCode
    3668408
  • Title

    Opto-electrical characteristics of Si-based blocked-impurity-band detector: Experiment and simulation

  • Author

    Xiaodong Wang;Bingbing Wang;Liwei Hou;Wei Xie;Xiaoyao Chen;Ming Pan

  • Author_Institution
    No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai, China 200331
  • fYear
    2015
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    Opto-electrical characteristics of Si-based blocked-impurity-band (BIB) detector are investigated by combing experiment with simulation. The measured black-body response characteristics at different temperature are discussed. The simulated dark current characteristics with different thicknesses of blocking layer are also presented by taking into account impurity-band effects.
  • Keywords
    "Detectors","Anodes","Dark current","Temperature measurement","Impurities","Temperature","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292801
  • Filename
    7292801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668408