• DocumentCode
    3668414
  • Title

    Effect of V-shaped pit density on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes: Simulation

  • Author

    Z. J. Quan;J. L. Liu;F. Fang;F. Y. Jiang

  • Author_Institution
    National Institute of LED on Si Substrate, Nanchang University, 235 Nan Jing East Road, Nanchang, China 330047
  • fYear
    2015
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    LEDs with different density of V-shaped pits are numerically investigated. To validate the used models and parameters, the experimentally external quantum efficiency (EQE) curve of blue InGaN/GaN multiple quantum well light-emitting diode (LED) is fitted with the calculated EQE curve. Simulation results show that the EQE is firstly enhanced and then reduced with an increase in the density of pits. The optimal value of the density is about 2.5e9 cm-2.
  • Keywords
    "Light emitting diodes","Gallium nitride","Numerical models","Radiative recombination","Physics","Substrates","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292807
  • Filename
    7292807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668414