Title :
The dependence of dark current on temperature in epitaxial Si:P BIB detector
Author :
Bingbing Wang;Xiaodong Wang;Liwei Hou;Wei Xie;Xiaoyao Chen;Ming Pan
Author_Institution :
No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai, China 200331
Abstract :
The dependence of dark current on temperature has been investigated for epitaxial Si:P blocked-impurity-band (BIB) detector. For this purpose, an experimental testing system was constructed. The dark-current behavior of epitaxial Si:P BIB detector in the temperature range from 9.2K to 24.3K and the bias range from -3V to 3V has been obtained. It is shown that the detector exhibits low dark current at the bias voltage of 0.2V and temperature below 20K.
Keywords :
"Detectors","Dark current","Impurities","Epitaxial growth","Temperature measurement","Temperature dependence","Current measurement"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292814
