Title :
Resonant tunneling effect of InAs quantum dots grown on InAlAs/InP
Author :
B. Zhang;W. G. Ning;F. M. Guo
Author_Institution :
Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials &
Abstract :
InAs quantum dots grown on InAlAs/InP were discussed by Lumerical software in this paper. By discussing current-voltage characteristics curve (I-V) and capacity-voltage characteristics curve (C-V), we founded that resonant tunneling effect of InAs QDs and barrier of InP and InAlAs result in the asymmetry of I-V.
Keywords :
"Indium phosphide","III-V semiconductor materials","Indium compounds","Resonant tunneling devices","Capacitance-voltage characteristics","Current measurement","Energy states"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292834
