Three-barrier, two-well resonant tunneling structure: Photoinduced voltage shift behavior

In the paper, a three-barrier, two-well resonant tunneling structure (RTS) integrated with a 1.2-μm-thick n-type GaAs layer are simulated. Our simulation results show that the coupling between the energy level in the incident well and that in the central quantum well is the key point in understanding the origin of the I-V multi-peak at reverse bias. A photoinduced voltage shift manifests that the 1.2-μm-thick, slightly doped n-GaAs layer plays an important role in enhancing photoelectric sensitivity.