Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys

We overview the impact of random alloy fluctuations on the electronic properties of InAlN and InGaN systems. Both density functional theory and empirical atomistic approaches have been applied. We describe our empirical atomistic approach to describe the electronic structure of III-N alloys and quantum wells (QWs). We show that random alloy fluctuations lead to wave function localization effects in the electronic structure of InAlN and InGaN alloys and QWs.