Measuring the Thermal Resistance in Light Emitting Diodes Using a Transient Thermal Analysis Technique

We explore a modified thermal resistance analysis by induced transient method applied to light emitting diodes (LEDs) to discretize the junction-to-package thermal resistance. The temperature response of LED and package configuration is evaluated for discrete contributions from identifiable spatial domains in the multilayered device and package structure to obtain their thermal resistances and thermal capacitances using a Laplace transform-based method. The technique successfully extracts the junction-to-package thermal parameters of a variety of LED package configurations from the experimental temperature transient measurements of the LED junction and provides a straightforward method by which these parameters can be obtained.