Dielectric and thermal properties of parylene N and D films for power electronic surface insulation

In this paper, we have investigated the impact of a crystallization performed through a 300°C thermal curing on the dielectric properties and thermal characteristics of parylene N (PA-N) and parylene D (PA-D). Particularly, the evolution of the permittivity and loss factor in temperature and frequency ranges from -150°C to 300°C, and from 10^-1 Hz to 10⁶ Hz respectively, and the DC and AC dielectric strength have been measured. The results show a strong impact of crystallization on PA-N while PA-D remains unaffected.