SiC power devices aspects for high power density and system approach for a successful market implementation

For many years SiC power semiconductors are praised to be the revolution in power density and efficiency. Infineon as the leader in power semiconductors is fully committed to this technology, however, the actual implementation of SiC power devices is still in the beginning, based on marketing theories we are still in front of the so called chasm. So the real take off is still in front of us and to move forward the today´s hurdles should be investigated and mitigated. Two main reasons seem to be responsible for this situation — on the one hand side of course the high cost of the new components compared to silicon based parts, but in addition, additional challenges appear around the semiconductors provided the benefits will be leveraged completely. One of the aspects is here the considerably enhanced power density which put a new light on cooling systems and of course the challenges which arise with the postulated increase in switching frequency, mainly in applications with high currents. The contribution will give some more inside into this matter and will sketch selected ideas how to mitigate those problems jointly between the semiconductor supplier and users.