Title :
Development of medium voltage SiC power technology for next generation power electronics
Author :
Edward Van Brunt;David Grider;Vipindas Pala;Sei-Hyung Ryu;Jeff Casady;John Palmour
Author_Institution :
Cree, Inc., Durham, NC, USA, 27703
fDate :
5/1/2015 12:00:00 AM
Abstract :
Recent developments in 3.3 kV to 15 kV 4H-SiC MOSFETs are discussed, and device merits are compared to traditional Silicon IGBT technology, as well as 15 kV SiC n-IGBTs. Performance near theoretical limits was achieved for the 4H-SiC MOSFETs; bipolar 4H-SiC devices were analyzed and were found to handle higher currents at low frequencies.
Keywords :
"MOSFET","Silicon carbide","Switching frequency","Insulated gate bipolar transistors","Silicon","Performance evaluation","Switches"
Conference_Titel :
Integrated Power Packaging (IWIPP), 2015 IEEE International Workshop on
DOI :
10.1109/IWIPP.2015.7295981
